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Nanogermanium/silicon oxide composite thin films (Ge/SiOx)

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Cat. No.: X26-06-ZQ4437

Nanogermanium/silicon oxide composite thin films (Ge/SiOx)

Name: Nanogermanium/silicon oxide composite thin films (Ge/SiOx)
SKU: X26-06-ZQ4437

Inquiry

Synonym: Ge/SiOx; Nanogermanium/silicon oxide composite thin films; Ge-SiOx zero-valent amorphous coatings

Product Size

100 mg; 250 mg; 500 mg; 1 g; 5 g

Price

Datasheet

Datasheet

MSDS

MSDS

Properties

Description

This material is an electronic thin film consisting of zero-dimensional germanium nanocrystals embedded within an insulating amorphous silicon oxide (SiOx) matrix. The configuration utilizes quantum confinement within the isolated germanium dots to generate distinct optical luminescent bands and charge-trapping mechanisms suited for non-volatile information storage.

Source

Custom synthesis

Form

Solid or powder

Purity

≥95%

Impurities

No visible impurities to the naked eye.

Identity

HPLC/MS/NMR

Applications

This product can be used for floating-gate flash memory element prototyping, silicon-compatible optoelectronic device design, and quantum-confinement transport modeling.

Publications

Publications (0)

Publications

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Publications

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