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Oxygen vacancy-rich porous NiO/CoN interfacial nanowire arrays (PINWs)
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Cat. No.: X26-06-ZQ3513

Oxygen vacancy-rich porous NiO/CoN interfacial nanowire arrays (PINWs)

Synonym: PINWs; Oxygen vacancy-engineered porous nickel oxide/cobalt nitride interfacial nanowire arrays; Defect-rich porous NiO-CoN heterostructured nanowires; Oxygen vacancy rich porous nickel oxide cobalt nitride interfacial nanowire arrays

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Product Size
100 mg; 250 mg; 500 mg; 1 g; 5 g
Price
Datasheet
MSDS
Properties
Description
Interfacial nanowire arrays combining nickel oxide (NiO) and cobalt nitride (CoN) junctions, processed to contain high densities of surface oxygen vacancies to accelerate charge transfers.
Source
Custom synthesis
Form
Solid or powder
Purity
≥95%
Impurities
No visible impurities to the naked eye.
Identity
HPLC/MS/NMR
Applications
Applied in highly active alkaline oxygen evolution reactions (OER) and innovative zinc-air battery configurations.
Publications
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